Tapobrata Bandyopadhyay, Lei Shan, et al.
ECTC 2009
We report an 850-nm, vertical-cavity surface-emitting laser (VCSEL)-based optical link that achieves new benchmarks in speed and power efficiency. The laser diode driver and receiver ICs are fabricated in standard 90-nm bulk CMOS, and the gallium arsenide optoelectronic devices are commercial components. An operation at a bit-error rate less than 10-12 at 25 Gb/s is achieved, representing the highest speed reported to date for a CMOS-based full optical link. At 22 Gb/s, the link power efficiency is 3.8 pJ/bit and improves further at lower data rates, attaining a minimum of 2.6 pJ/bit at 15 Gb/s. The efficiency numbers reported here, which include a complete accounting of the power dissipation of all the components, are the best reported for any optical interconnect in any technology. This work demonstrates the scalability of VCSEL-based links in both efficiency and speed to meet the demanding requirements of next-generation exa-scale computing and large data center systems. © 2012 IEEE.
Tapobrata Bandyopadhyay, Lei Shan, et al.
ECTC 2009
Neinyi Li, Clint L. Schow, et al.
OFC 2010
Benjamin G. Lee, Clint L. Schow, et al.
CLEO 2010
Huapu Pan, Solomon Assefa, et al.
CLEO 2012