William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The Luttinger parameters of cubic SiC are determined by using a modified Lawaetz approach, including the hole-phonon coupling for small spin-orbit interaction: γ1 = 2.817, γ2 = 0.508, γ3 = 0.860, κ = -0.41. Revised ground state calculations of the electron-hole liquid, including the nonparabolic valence band dispersion, for conflicting theories of the electron-phonon interaction, yield a good agreement between the ε{lunate}*0-approximation and experiment. The calculated ground state binding energy of the free exciton and of the point-charge acceptor are 26.7 and 179 meV respectively. These calculations yield a revised value of the band gap energy Eg = 2.416 eV. © 1981.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
T.N. Morgan
Semiconductor Science and Technology