PaperInAs nanowire growth on oxide-masked 〈111〉 siliconMikael T. Björk, Heinz Schmid, et al.Journal of Crystal Growth
PaperCorrelation between special grain boundaries and electromigration behavior of aluminum thin filmsK.T. Lee, J.A. Szpunar, et al.Canadian Metallurgical Quarterly
Conference paperA no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCMNanbo Gong, W. Chien, et al.VLSI Technology 2020
Conference paperDensity scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyondSarunya Bangsaruntip, K. Balakrishnan, et al.IEDM 2013
