Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
We employ the Monte Carlo simulation method of classical statistical mechanics to study the structure and energetics of the crystal/amorphous interface. The interface is found to be approximately four atomic layers thick and provides good bonding between the amorphous and crystalline phases. © 1978.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
R. Ghez, J.S. Lew
Journal of Crystal Growth
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992