Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We employ the Monte Carlo simulation method of classical statistical mechanics to study the structure and energetics of the crystal/amorphous interface. The interface is found to be approximately four atomic layers thick and provides good bonding between the amorphous and crystalline phases. © 1978.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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Inorganic Chemistry
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IEEE T-MTT