Nicholas A. Lanzillo, T. Standaert, et al.
Journal of Applied Physics
We demonstrate a simulation workflow based on first-principles calculations to rapidly screen candidate materials for viability as ferromagnetic electrodes in magnetic tunnel junctions (MTJs) for the next generation of high-performance magnetic random access memory (MRAM) technology. For a series of Fe-based alloys with a fixed crystal structure, we calculate formation energies, bulk spin polarization, and essential magnetic properties including magnetic anisotropy energy (MAE) and tunneling magnetoresistance (TMR). This work demonstrates a materials optimization strategy that can guide on-wafer experiments
Nicholas A. Lanzillo, T. Standaert, et al.
Journal of Applied Physics
Thomas G. Pattison, Alexander E. Hess, et al.
ACS Nano
Karen Petrillo, Dave Hetzer, et al.
ANTS 2019
Youngseok Kim, Soon-Cheon Seo, et al.
IEEE Electron Device Letters