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Conference paperSpin-transfer torque MRAM with reliable 2 ns writing for last level cache applicationsGuohan Hu, D. Kim, et al.IEDM 2019
PaperMaterial parameters of perpendicularly magnetized tunnel junctions from spin torque ferromagnetic resonance techniquesChristopher Safranski, Yu-Jin Chen, et al.Applied Physics Letters
PaperBias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfacesJonathan Z. Sun, Philip Trouilloud, et al.AIP Advances
