Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
A procedure for the vapor deposition of a thick layer of silicon oxide was developed to confine thin polymer films between two rigid flat walls. For silicon oxide overlayers thicker than ∼ 1.5 μm the deposited silicon oxide layer is mechanically stable against heating above the glass transition temperature of the polymer. Neutron reflectivity measurements show that the interface between the polymer and the deposited silicon oxide is sharp, having a characteristic width of 1.5 nm. © 1994.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
J. Tersoff
Applied Surface Science
Eloisa Bentivegna
Big Data 2022
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990