Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Paper
A parameter sensitivity study for Czochralski bulk flow of silicon
Abstract
A series of digital simulations indicates that an accurate measurement of the surface-tension temperature coefficient is important to the understanding of melt flow in Czochralski growth of silicon. If that parameter lies near the upper end of its presently conjectured range, the flow is also sensitive to the value of the viscosity coefficient. © 1982.