Optimization of real phase-mask performance
F.M. Schellenberg, M. Levenson, et al.
BACUS Symposium on Photomask Technology and Management 1991
The running solutions and I-V characteristic of an extended Josephson junction in a state near the ohmic regime are calculated by a perturbation method. Both the voltage-driven and current-driven cases are considered and the convergence of the perturbation procedure is proved. An integral representation of the first correction, in the I-V curve, to the ohmic regime-as well as its dependence on the external magnetic field-is given and evaluated numerically for various values of the junction parameters. © 1979.
F.M. Schellenberg, M. Levenson, et al.
BACUS Symposium on Photomask Technology and Management 1991
Jaione Tirapu Azpiroz, Alan E. Rosenbluth, et al.
SPIE Photomask Technology + EUV Lithography 2009
A.R. Gourlay, G. Kaye, et al.
Proceedings of SPIE 1989
Andrew Skumanich
SPIE Optics Quebec 1993