Conference paper
A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
This paper presents a Ku band Gm boosted Colpitts VCO designed in IBM 0.13μm SiGe BiCMOS8hp technology for E-Band and V-band backhaul transceivers. The VCO achieves 23.3% tuning range, covering 15.2 - 19.2 GHz while maintaining low phase noise. Measured phase noise at 10 MHz is lower than -133 dBc/Hz at 25°C. The VCO shows robust behaviour to temperature variations, with a measured frequency drift of less than 15 ppm/°C. The power consumption is 51.4mW and calculated FOM is -183.5 dBc/Hz.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Oded Katz, Dan A. Ramon, et al.
IEEE Transactions on VLSI Systems
Nadav Mazor, Benny Sheinman, et al.
IEEE MWCL
Sergi Abadal, Benny Sheinman, et al.
IEEE Micro