C. Cabral, J.M.E. Harper, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Zone-melt recrystallization (ZMR) of polycrystalline silicon-on-insulator films has been used to produce a variety of tilt grain boundaries for electrical characterization. Electron channeling patterns reveal the grains to have misorientations up to ∼25°and the parallel boundaries to be separated by distances of up to ∼1 mm. Current-voltage measurements indicate that the boundaries are electrically inactive, with no evidence of defect gap states even after long high-temperature anneals.
C. Cabral, J.M.E. Harper, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
M.F.C. Hisholm, D.A. Smith
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
M.B. Small, D.A. Smith, et al.
Scripta Metallurgica et Materiala
D.A. Smith, K.N. Tu, et al.
Ultramicroscopy