J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV. © 1993 The American Physical Society.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
R. Ghez, M.B. Small
JES