Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV. © 1993 The American Physical Society.
Imran Nasim, Melanie Weber
SCML 2024
T.N. Morgan
Semiconductor Science and Technology
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films