Constance Rost, Siegfried Karg, et al.
Synthetic Metals
A light-emitting organic field-effect transistor (OFET) with ambipolar current characteristics was studied. The light intensity was controlled by both the drain-source voltage and the gate voltage. The device structure serves as a model system for ambipolar light-emitting OFETs. The device demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors.
Constance Rost, Siegfried Karg, et al.
Synthetic Metals
Carlos Marquez, Carlos Navarro, et al.
Journal of Applied Physics
Olivier Maher, N. Harnack, et al.
DRC 2023
Beat Ruhstaller, Tilman Beierlein, et al.
IEEE Journal on Selected Topics in Quantum Electronics