Conference paper
A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
An IF to RF up-conversion mixer for the entire E-BAND 71-76GHz and 81-86GHz frequency range was designed and fabricated in IBM 0.12μm SiGe technology. The Mixer comprises of a double balanced Gilbert-cell with a degeneration inductor in the amplifying stage for increased linearity. The mixer exhibits conversion gain higher than -2dB, output compression point above -7dBm, and LO leakage less than -30dB. The core mixer area is 0.37mm2 and consumes 140mW from a 2.7V power supply. © 2013 IEEE.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
Nadav Mazor, Benny Sheinman, et al.
IEEE MWCL
Sergi Abadal, Benny Sheinman, et al.
IEEE Micro