R. Ghez, J.S. Lew
Journal of Crystal Growth
An analytical approximation is found for Γ0, the TE0 radiation confinement factor in symmetric heterostructures, by using a combination of its asymptotes in the limits of very thin active layers and thick active layers, respectively. The exact expression for Γ0 is calculated and compared to the approximation formula, It is found that for any light guiding planar double heterostructure (DH) configuration the approximation is at most −1.5 percent off with respect to the exact Γ0 value. © 1978 IEEE
R. Ghez, J.S. Lew
Journal of Crystal Growth
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992