B.L. Crowder, F. Fairfield
IEEE T-ED
Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260-300 keV) in an electrically active form are reported. Above a critical dose, room-temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C. © 1969 The American Institute of Physics.
B.L. Crowder, F. Fairfield
IEEE T-ED
N.J. Chou, B.L. Crowder
Journal of Applied Physics
J. De Sousa Pires, P. Ali, et al.
Applied Physics Letters
C.-Y. Ting, B.L. Crowder
JES