Conference paper
IR emission from Schottky barrier carbon nanotube FETs
R. Martel, J. Misewich, et al.
DRC 2004
Backside optical emission was used to diagnose excess quiescent current in a multimillion gate microprocessor. Emission images showed the current was due to FET's improperly set in a conducting state. The utility of backside optical emission for IC diagnostics is discussed, and requirements for optical detectors and sample preparation are considered.
R. Martel, J. Misewich, et al.
DRC 2004
G.V.Subba Rao, J.C. Tsang
Materials Research Bulletin
J.A. Kash, J.C. Tsang, et al.
Physical Review Letters
B. Pezeshki, J.A. Kash, et al.
Applied Physics Letters