Homare Hiroi, Jeehwan Kim, et al.
PVSC 2014
Energy band alignments between CdS and Cu2 ZnSn (S xSe1-x) 4 (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S] / [S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes. © 2011 American Institute of Physics.
Homare Hiroi, Jeehwan Kim, et al.
PVSC 2014
Richard Haight, Aaron Barkhouse, et al.
MRS Fall Meeting 2013
Tayfun Gokmen, Oki Gunawan, et al.
Applied Physics Letters
Oki Gunawan, Tayfun Gokmen, et al.
PVSC 2012