Hiroaki Arimura, Richard Haight, et al.
Applied Physics Letters
A record high electron mobility (248 cm 2/V . s at E eff of 1 MV/cm) was obtained at T inv of 1.47 nm, with a bandedge effective work function, by a Hf-Si/HfO 2 stack using gatelast process, resulting in I ON of 1178 μA/μm (I OFF of 100 nA/ μm) at V dd of 1.0 V for a 45-nm gate nMOSFET without strain-enhanced technology. © 2009 IEEE.
Hiroaki Arimura, Richard Haight, et al.
Applied Physics Letters
Choonghyun Lee, H. Kim, et al.
VLSI Technology 2016
Franco Stellari, Leonidas E. Ocola, et al.
IPFA 2022
Xiao Sun, Christopher P. D’Emic, et al.
VLSI Technology 2017