203 μa threshold current strained V-groove lasers
S. Tiwari, G.D. Pettit, et al.
IEDM 1992
The indirect energy gap Eg of GaP in the temperature range from 0 to 900°K was determined from absorption measurements. Below 400°K, Eg was determined from absorption due to the creation of excitons at isolated nitrogen atoms substituted on P sites. This absorption was measured with wavelength-modulated exciting light. The intrinsic absorption edge was measured over the full temperature range by conventional transmission. Above 400°K, the gap was determined from a numerical fit of the intrinsic-edge absorption data to a theoretical expression using parameters obtained from low-temperature measurements, with Eg as the only adjustable parameter. The shapes of the experimental curves are in good agreement with the theoretical calculations. At 300°K, Eg is 2.261 eV. Light emission from diodes was studied from 300 to 900°K. The principal high-temperature emission line parallels the energy gap at about 45-meV lower energy, and is attributed to an exciton recombination. © 1968 The American Physical Society.
S. Tiwari, G.D. Pettit, et al.
IEDM 1992
Chu R. Wie, K. Xie, et al.
Proceedings of SPIE 1989
M.R. Lorenz, W. Reuter, et al.
Applied Physics Letters
X. Yin, H.-M. Chen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures