Spin transfer switching in sub-100nm magnetic tunnel junctions
S. Assefa, J.Z. Sun, et al.
INTERMAG 2006
A method is developed for the fabrication of sub-100 nm current-perpendicular spin-valve junctions with low contact resistance. The approach is to use a batch-fabricated trilayer template with the junction features defined by a metal stencil layer and an undercut in the insulator. The spin-valve thin film stack is deposited afterwards into the stencil, with the insulator undercut providing the necessary magnetic isolation. Using this approach, reproducible spin-current-induced magnetic switching is demonstrated for junctions down to 50nm×100nm in size. © 2002 American Institute of Physics. © 2002 American Institute of Physics.
S. Assefa, J.Z. Sun, et al.
INTERMAG 2006
C.C. Tsuei, J.R. Kirtley, et al.
Physica Scripta T
J.R. Kirtley, C.C. Tsuei, et al.
Czechoslovak Journal of Physics
J.Z. Sun, L. Krusin-Elbaum, et al.
Applied Physics Letters