Revanth Kodoru, Atanu Saha, et al.
arXiv
Models of Schottky barrier formation based on intrinsic interface or surface states suggest Fermi-level pinning at or near some effective mid-gap energy EB. This energy can be calculated directly from the bulk semiconductor band structure. Details of the calculation of EB and hence of Schottky barrier heights, as well as heterojunction band line-ups, are given here. © 1986.
Revanth Kodoru, Atanu Saha, et al.
arXiv
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter