Ronald Troutman
Synthetic Metals
S-parameter test structures show total capacitances per perimeter of ESD diodes increased from ∼0.42fF/μm in 90nm technologies to ∼0.7fF/μm in 65nm and 45nm technologies. To achieve lower capacitances for high frequency circuits, layout and process optimization are needed. SCR devices from a 45nm technology show ∼0.32fF/μm and can be used for circuit applications with stringent capacitance requirement. Two different BEOL wiring schemes are investigated for optimized metal coupling capacitance.
Ronald Troutman
Synthetic Metals
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.H. Stathis, R. Bolam, et al.
INFOS 2005
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990