C.L. Schow, F.E. Doany, et al.
OFC 2007
We have measured the dependence of the free-carrier lifetime on O + ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm -2 the measured carrier lifetime reached a limit of 600 fs.
C.L. Schow, F.E. Doany, et al.
OFC 2007
C.C. Chi, M.M.T. Loy, et al.
Applied Physics Letters
R.W. McGowan, D. Grischkowsky, et al.
Applied Physics Letters
J.A. Kash, F.E. Doany, et al.
OFC/NFOEC 2006