M.K. Wu, M.J. Wang, et al.
Physica C: Superconductivity and its applications
We have measured the dependence of the free-carrier lifetime on O + ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm -2 the measured carrier lifetime reached a limit of 600 fs.