Shu-Jen Han, Josephine Chang, et al.
IEDM 2010
This letter presents a detailed study of transport in graphene field-effect transistors (GFETs) with various channel lengths, from 5 μm down to 90 nm, using transferred graphene grown by chemical vapor deposition. An electronhole asymmetry observed in short-channel devices suggests a strong impact from graphene/metal contacts. In addition, for the first time, we observe a shift of the gate voltage at the Dirac point in graphene devices as a consequence of gate length scaling. The unusual shift of the Dirac point voltage has been identified as one of the signatures of short-channel effects in GFETs. © 2011 IEEE.
Shu-Jen Han, Josephine Chang, et al.
IEDM 2010
Joerg Appenzeller, Yu-Ming Lin, et al.
IEEE Transactions on Electron Devices
Hugen Yan, Fengnian Xia, et al.
ACS Nano
Keith A. Jenkins, Damon B. Farmer, et al.
Applied Physics Letters