Armin Segmüller, I.C. Noyan, et al.
Progress In Crystal Growth And Characterization
We have investigated epitaxial BaF2/CaF2 bilayers on Si(111) with ion channeling, grazing-incidence x-ray diffraction, and transmission electron microscopy. The BaF2 layer, which was grown on a thin intermediate CaF2 layer, showed a channeling minimum yield of 8% and a residual strain of 0.2%. Regions of BaF2 with a mosaic spread in orientation were observed but otherwise the epitaxial quality of the fluoride bilayer was found to be very good.
Armin Segmüller, I.C. Noyan, et al.
Progress In Crystal Growth And Characterization
M. Wittmer, J. Freeouf
Physical Review Letters
R.M. Nicklow, M. Pomerantz, et al.
Physical Review B
C.R.M. Grovenor, P.E. Batson, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties