Positive optical lithography
Frederick H. Dill
ISSCC 1975
This paper presents techniques for measuring a new set of parameters used to describe the image forming properties of positive photoresist [1]. Exposure is described by three optical parameters, A, B,and C,through which the process is modelled. Development is described in terms of a rate relationship R(M) between the rate of removal of photoresist in the developer and the degree of exposure of the photoresist. This set of functional parameters provides a complete description of positive photoresist exposure and development, and is the basis for the theoretical process models discussed in the accompanying papers. Copyright © 1975 by the Institute of Electrical and Electronics Engineers, Inc.
Frederick H. Dill
ISSCC 1975
Peter S. Hauge, Ellen J. Yoffa
DAC 1986
Martine D. F. Schlag, Ellen J. Yoffa, et al.
IEEE TCADIS
Ravi Nair, C. Leonard Berman, et al.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems