E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
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Proceedings of SPIE 1989
R. Ghez, M.B. Small
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IEEE T-MTT