Mark W. Dowley
Solid State Communications
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
Mark W. Dowley
Solid State Communications
R. Ghez, J.S. Lew
Journal of Crystal Growth
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Eloisa Bentivegna
Big Data 2022