Hiroshi Ito, Reinhold Schwalm
JES
The chemisorption of H2O on Si(100)-(2×1) has been studied at room temperature using photoelectron spectroscopy and photon-stimulated desorption. Three H2O-induced valence orbitals are found at 6.2, 7.2, and 11.5 eV below the valence-band maximum (which is 0.4 eV below EF). They can be assigned to chemisorbed molecular H2O. The Si 2p level is chemically shifted by -0.9 eV corresponding to a single silicon-oxygen bond. Together with the observed work-function decrease, we suggest that H2O is adsorbed oxygen end down (possibly tilted). © 1983 The American Physical Society.
Hiroshi Ito, Reinhold Schwalm
JES
Ronald Troutman
Synthetic Metals
John G. Long, Peter C. Searson, et al.
JES
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures