PaperNonalloyed ohmic contacts to n-Si using a strained Si0.50Ge 0.50 buffer layerHsing-Kuen Liou, Edward S. Yang, et al.Applied Physics Letters
PaperFormation of shallow silicide contacts of high Schottky barrier on Si: Alloying Pd and Pt with W versus alloying Pd and Pt with SiM. Eizenberg, K.N. TuJournal of Applied Physics
PaperLow-temperature redistribution of As in Si during Pd2Si formationI. Ohdomari, K.N. Tu, et al.Applied Physics Letters
