J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Self and nonself aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors fabrication processes were compared. The self aligned devices were found exhibiting higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies, and maximum oscillation frequencies compared to nonself-aligned devices.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering