Joachim Knoch, Joerg Appenzeller
Physica Status Solidi (A) Applications and Materials Science
Three different carbon nanotube (CN) field-effect transistor (CNFET) designs are compared by simulation and experiment. While a C-CNFET with a doping profile similar to a "conventional" (referred to as C-CNFET in the following) p-or n-MOSFET in principle exhibits superior device characteristics when compared with a Schottky barrier CNFET, we find that aggressively scaled C-CNFET devices suffer from "charge pile-up" in the channel. This effect which is also known to occur in floating body silicon transistors deteriorates the C-CNFET off-state substantially and ultimately limits the achievable on/off-current ratio. In order to overcome this obstacle we explore the possibility of using CNs as gate-controlled tunneling devices (T-CNFETs). The T-CNFET benefits from a steep inverse subthreshold slope and a well controlled off-state while at the same time delivering high performance on-state characteristics. According to our simulation, the T-CNFET is the ideal transistor design for an ultrathin body three-terminal device like the CNFET. © 2005 IEEE.
Joachim Knoch, Joerg Appenzeller
Physica Status Solidi (A) Applications and Materials Science
Zhihong Chen, Joerg Appenzeller, et al.
Science
Heinz Schmid, Mikael T. Björk, et al.
Nano Letters
Yu-Ming Lin, Damon B. Farmer, et al.
DRC 2008