J. Tersoff
Physical Review B - CMMP
We show that strained epitaxial layers can relax by two competing mechanisms. At large misfit, the surface becomes rough, allowing easy nucleation of dislocations. However, strain-induced surface roughening is thermally activated, and the energy barrier increases very rapidly with decreasing misfit . Thus below some misfit c, the strain relaxes by nucleation of dislocations at existing sources before the surface has time to roughen. Relaxation via surface roughening is technologically undesirable; we discuss how temperature, surfactants, or compositional grading change c and so control the mode of relaxation. © 1994 The American Physical Society.
J. Tersoff
Physical Review B - CMMP
J. Tersoff
Physical Review Letters
P.C. Kelires, J. Tersoff
Physical Review Letters
M.D. Johnson, K.T. Leung, et al.
Surface Science