Conference paper
Stress-driven segregation at a Si-Ge alloy surface
J. Tersoff, P.C. Kelires
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
The different stability modes of a vicinal surface under stress were studied. Bunching and undulation mechanisms were performed. Results showed that the step spacing for crossover depends exponentially on the stress. It was also found that atom attachment barriers tend to suppress stress-driven instabilities.
J. Tersoff, P.C. Kelires
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
J. Tersoff
Physical Review Letters
François Léonard, J. Tersoff
Physical Review Letters
J. Tersoff, B.J. Spencer, et al.
Physical Review Letters