A.B. Fowler, A. Hartstein
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Conductance has been studied in metal-oxide-silicon field-effect transistor accumulation-layer samples in which it is possible to constrict the channel to small dimensions both perpendicular to the surface and perpendicular to the channel. A temperature-dependent conductance σ=σ0exp[-(T0T)n] is observed, where n=12 for small channel widths and n=13 for larger channel widths. It is believed that this behavior arises from a transition from one-dimensional to two-dimensional variable-range hopping in the sample. © 1982 The American Physical Society.
A.B. Fowler, A. Hartstein
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
A.D. Benoit, C.P. Umbach, et al.
Physical Review Letters
A. Hartstein, A.B. Fowler, et al.
Surface Science
A. Hartstein, R.H. Koch
Neural Networks