Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The time-evolution of the photoluminescence from a GaAs/GaAlAs multi quantum well structure is studied using picosecond time-resolved spectroscopy in magnetic fields up to 25 T and under almost resonant excitation. Ultra short rise-times of 10-30 ps are found, while the observed decay consists of a fast component of 20-60 ps due to stimulated emission, and a slow component due to spontaneous emission of about 200 ps. From the magnetic field dependence of both the rise- and decay-time it is found that the carrier cooling rate due to phonon emission decreases with increasing magnetic field. © 1989.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Frank Stem
C R C Critical Reviews in Solid State Sciences
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990