Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The materials, processes, and reliability issues in the development of multi-level Cu chip interconnections are described. Fully integrated four-level Cu/polyimide structures have been fabricated by using a damascene process which maintains planarity at each level. Electromigration lifetime for two-level Cu interconnections is found to be more than two orders of magnitude longer than that of Al(Cu) while having approximately twice the conductivity. © 1998 Elsevier Science S.A.
T.N. Morgan
Semiconductor Science and Technology
P. Alnot, D.J. Auerbach, et al.
Surface Science
Frank Stem
C R C Critical Reviews in Solid State Sciences
R. Ghez, J.S. Lew
Journal of Crystal Growth