Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The shift of 2p core-level binding energies associated with surface atoms relative to bulk atoms for an Al(001) surface has been determined using photoemission partial-yield techniques. The observed shift is -57 meV. A possible mechanism for the core-level shift is discussed using a simple jellium model; i.e., the shift is related to the variation in the electrostatic potential associated with the conduction-electron response to the jelliumlike surface potential step. © 1981 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures