PaperPerformance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)Seung Hyun Park, Yang Liu, et al.IEEE T-ED
PaperTemperature dependence of the transconductance in ballistic III-V QWFETsYang Liu, Mathieu Luisier, et al.IEEE T-ED
PaperA simple semiempirical short-channel MOSFET current-voltage model continuous across all regions of operation and employing only physical parametersAli Khakifirooz, Osama M. Nayfeh, et al.IEEE Transactions on Electron Devices
PaperPerformance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)Seung Hyun Park, Yang Liu, et al.IEEE T-ED
