PaperOn the interpretation of ballistic injection velocity in deeply scaled MOSFETsYang Liu, Mathieu Luisier, et al.IEEE T-ED
PaperBallistic One-Dimensional InAs Nanowire Cross-Junction InterconnectsJohannes Gooth, Mattias Borg, et al.Nano Letters
PaperPerformance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)Seung Hyun Park, Yang Liu, et al.IEEE T-ED