Crystallinity and wet etch behavior of HfO2 films grown by MOCVD
Katherine L. Saenger, Cyril Cabral Jr., et al.
MRS Proceedings 2003
The crystallization behavior of ultrathin phase change films was studied using time-resolved x-ray diffraction (XRD). Thin films of variable thickness between 1 and 50 nm of the phase change materials Ge2 Sb2 Te5 (GST), N-doped GST, Ge15 Sb85, Sb 2Te, and Ag- and In-doped Sb2Te were heated in a He atmosphere, and the intensity of the diffracted x-ray peaks was recorded. It was found for all materials that the crystallization temperature increases as the film thickness is reduced below 10 nm. The increase depends on the material and can be as high as 200 °C for the thinnest films. The thinnest films that show XRD peaks are 2 nm for GST and N-GST, 1.5 nm for Sb2Te and AgIn- Sb2Te, and 1.3 nm for GeSb. This scaling behavior is very promising for the application of phase change materials to solid-state memory technology. © 2008 American Institute of Physics.
Katherine L. Saenger, Cyril Cabral Jr., et al.
MRS Proceedings 2003
Kristof Darmawikarta, Simone Raoux, et al.
Applied Physics Letters
Ajay Singh, Lukas Lutz, et al.
Nano Letters
Yuan Zhang, H.-S. Philip Wong, et al.
Applied Physics Letters