A. Krol, C.J. Sher, et al.
Surface Science
Electrical breakdown in GaAs Schottky diodes creates a granular filamentary structure of submicron dimensions between the contacts. The filament exhibits very fast (<2 nsec) electrical switching between stable resistance states. Irrespective of the contact metal, the filament becomes superconducting when in the low-resistance state. Electron transport in all the resistance states is intergrain tunneling between metallic inclusions and is governed by an activation energy. Switching is not based on metal transport. © 1975.
A. Krol, C.J. Sher, et al.
Surface Science
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications