Cyclotron mass of two-dimensional holes in strained Si/Si0.88Ge0.12/Si heterostructures

S.-H. Song; D.C. Tsui; F. Fang

doi:10.1016/0038-1098(95)00402-5

Solid State Communications

Paper

01 Jan 1995

Cyclotron mass of two-dimensional holes in strained Si/Si_0.88Ge_0.12/Si heterostructures

View publication

Abstract

We have observed cyclotron resonance of the two-dimensional holes in strained layer Si/Si0.88Ge0.12/Si heterostructures with densities ps=3.7×1011cm-2 and 4.2×1011cm-2 in magnetic fields from 4T to 8T at 4.2K. Our data yield a mass value of (0.18±0.02)me, in good agreement with the calculated in-plane mass of the MJ=± 3 2 "heavy hole" band. © 1995.

Paper