Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
The use of a dedicated chamber to perform pre-epi deposition cleaning allows native oxide removal with a low thermal budget, and significantly improves throughput of low-temperature Si and SiGe applications. Wafers processed in the cleaning chamber show no detectable contaminants, and the cleansed surface is actually significantly smoother because of cleaning down to a sub-angstrom level.