Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
The use of a dedicated chamber to perform pre-epi deposition cleaning allows native oxide removal with a low thermal budget, and significantly improves throughput of low-temperature Si and SiGe applications. Wafers processed in the cleaning chamber show no detectable contaminants, and the cleansed surface is actually significantly smoother because of cleaning down to a sub-angstrom level.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Julien Autebert, Aditya Kashyap, et al.
Langmuir
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics