Conference paper
ON THE DETERMINATION OF SHARP DOPING PROFILES.
Subramanian S. Iyer, Frederick G. Allen
ECS Meeting 1984
Paper
Demonstration of a p-Channel BICFET in the GexSi1-x/Si System
Abstract
The first operational bipolar inversion-channel field-effect transistors (BICFET’s) based on the GexSi1-x/Si system have been successfully demonstrated. The 300 K current gain of β = 365 at a current density of Jc= 2.5 x 104A/cm2 is believed to be the highest value reported for any BICFET to date. The use of a double-heterojunction inversion channel eliminates the collector offset voltage. The present devices are limited by the channel resistance, so that performance improvements are expected for laterally scaled-down devices. © 1989 IEEE
Related
J.C. Tsang, Subramanian S. Iyer, et al.
Physical Review B
G. Northrop, D.J. Wolford, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
D.A. Grützmacher, T.O. Sedgwick, et al.
Applied Physics Letters