Solomon Assefa, Fengnian Xia, et al.
CLEO 2009
We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a Vπ·L figure of merit of 0.12V·mm, and an extinction ratio of -23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform. © 2012 Optical Society of America.
Solomon Assefa, Fengnian Xia, et al.
CLEO 2009
Jessie Rosenberg, William M. J. Green, et al.
OFC 2011
Douglas M. Gill, William M. J. Green, et al.
Optics Express
Douglas M. Gill, Chi Xiong, et al.
IEEE Photonics Technology Letters