Bing Dang, Muhannad S. Bakir, et al.
JMEMS
Paper
Device parameter optimization for reduced short channel effects in retrograde doping MOSFET
Abstract
A simple technique to optimize the device parameters of the retrograde channel doping MOSFET to minimize short channel effects for a constant threshold voltage is presented in this work. The results indicate that the highest possible substrate doping does not necessarily result in minimum short channel effects. © 1996 IEEE.
Related
Nicky Chau-Chun Lu, Levy Gerzberg, et al.
IEEE T-ED
Bing Dang, Muhannad S. Bakir, et al.
IEEE Transactions on Advanced Packaging
Conference paper
TableCNN: Deep learning framework for learning tabular data
Pranav Sankhe, Elham Khabiri, et al.
OM 2020