B.L. Crowder, F.F. Morehead
IEEE T-ED
Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank-Turnbull mechanism involving vacancies can be understood with a "kick-out model" in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.
B.L. Crowder, F.F. Morehead
IEEE T-ED
T.Y. Tan, U. Gösele, et al.
Applied Physics A Solids and Surfaces
F.F. Morehead, N.A. Stolwijk, et al.
Applied Physics Letters
F.F. Morehead, G. Mandel
Applied Physics Letters