T.Y. Tan, U. Gösele, et al.
Applied Physics A Solids and Surfaces
Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank-Turnbull mechanism involving vacancies can be understood with a "kick-out model" in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.
T.Y. Tan, U. Gösele, et al.
Applied Physics A Solids and Surfaces
F.F. Morehead
Journal of Applied Physics
K.N. Tu, G. Ottaviani, et al.
Journal of Applied Physics
F.F. Morehead
Journal of Materials Research