F.F. Morehead
Journal of Materials Research
Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank-Turnbull mechanism involving vacancies can be understood with a "kick-out model" in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.
F.F. Morehead
Journal of Materials Research
U. Gösele, K.N. Tu
Journal of Applied Physics
R.T. Hodgson, V.R. Deline, et al.
MRS Proceedings 1983
U. Gösele, F.F. Morehead, et al.
Applied Physics Letters