J. Bleuse, P. Voisin, et al.
Applied Physics Letters
A new diluted magnetic III-V semiconductor of In1-xMnxAs (x0.18) has been produced by molecular-beam epitaxy. Films grown at 300°C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200°C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps. © 1989 The American Physical Society.
J. Bleuse, P. Voisin, et al.
Applied Physics Letters
Z. Fisk, D.C. Johnston, et al.
Journal of Applied Physics
H. Ohno, H. Munekata, et al.
Journal of Applied Physics
S. Von Molnar, M.W. Shafer
Journal of Applied Physics