Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
The effect of P on the diffusivity of Ni and Si in Ni2Si has been studied by analyzing the growth kinetics of Ni2Si on P-doped and undoped polycrystalline Si films using W markers. The growth of Ni2Si during the reaction of Ni and the P-doped Si films is faster than that of Ni and the undoped Si films. Marker analysis showed that the dopant does not affect the activation energies of diffusion; rather it increases greatly the preexponential factor of the diffusion of Si. The dopant effect has been examined in terms of the correlation factor and the entropy factor. © 1988 The American Physical Society.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Robert W. Keyes
Physical Review B
T. Schneider, E. Stoll
Physical Review B