PaperA mechanism for dislocation multiplication at precipitates or inclusions in crystalsJ.W. Matthews, S. MaderScripta Metallurgica
PaperAccommodation of misfit across the interface between crystals of semiconducting elements or compoundsJ.W. Matthews, S. Mader, et al.Journal of Applied Physics
PaperCoincidence twist boundaries between crystals of MgO smokeP. Chaudhari, J.W. MatthewsApplied Physics Letters
PaperDefects in epitaxial multilayers. III. Preparation of almost perfect multilayersJ.W. Matthews, A.E. BlakesleeJournal of Crystal Growth
